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MRF6V2300NBR5

MRF6V2300NBR5

MRF6V2300NBR5

NXP USA Inc.

MRF6V2300NBR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MRF6V2300NBR5 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case TO-272BB
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated 110V
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 220MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRF6V2300
JESD-30 Code R-PDFM-F4
Qualification Status Not Qualified
Operating Temperature (Max) 225°C
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 900mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
JEDEC-95 Code TO-270AA
Gain 25.5dB
DS Breakdown Voltage-Min 110V
Power - Output 300W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
RoHS Status ROHS3 Compliant
MRF6V2300NBR5 Product Details

MRF6V2300NBR5 Description

 

MRF6V2300NBR5 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes MRF6V2300NBR5 N-channel transistor suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6V2300NBR5 has the common source configuration.

 

 

MRF6V2300NBR5 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging for lower junction temperatures

 

 

MRF6V2300NBR5 Applications

 

ISM applications

DC large signal applications

 


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