MRF6V2300NBR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
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MRF6V2300NBR5 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
TO-272BB
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated
110V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
220MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRF6V2300
JESD-30 Code
R-PDFM-F4
Qualification Status
Not Qualified
Operating Temperature (Max)
225°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
900mA
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
JEDEC-95 Code
TO-270AA
Gain
25.5dB
DS Breakdown Voltage-Min
110V
Power - Output
300W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
MRF6V2300NBR5 Product Details
MRF6V2300NBR5 Description
MRF6V2300NBR5 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes MRF6V2300NBR5 N-channel transistor suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6V2300NBR5 has the common source configuration.
MRF6V2300NBR5 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures