MW7IC2425NBR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MW7IC2425NBR1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
TO-272-16 Variant, Flat Leads
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
16
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated
65V
Additional Feature
ESD PROTECTION
HTS Code
8541.29.00.75
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Frequency
2.45GHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MW7IC2425
JESD-30 Code
R-PDFM-F16
Qualification Status
Not Qualified
Operating Temperature (Max)
225°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Current - Test
55mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
27.7dB
DS Breakdown Voltage-Min
65V
Power - Output
25W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
28V
RoHS Status
ROHS3 Compliant
MW7IC2425NBR1 Product Details
MW7IC2425NBR1 Description
Specifically created for 2450 MHz CW large-signal output and driver applications. Devices can be applied in industrial, medicinal, and scientific settings. These devices are made to guarantee a high degree of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.
MW7IC2425NBR1 Features
? Up to a Maximum of 28 VDD Operation Qualified
? Protection from Integrated ESD
? Outstanding Thermal Stability
? Plastic Package with 225°C Capability
? RoHS conformant
? on reel-to-reel tape. 500 Units per 44 mm, 13 inch Reel, R1 Suffix.