MRF6VP2600HR5 Description

MRF6VP2600HR5 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes transistor MRF6VP2600HR5 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6VP2600HR5 has the common source configuration.

MRF6VP2600HR5 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

MRF6VP2600HR5 Applications

ISM applications

DC large signal applications