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MRF8S21120HSR3

MRF8S21120HSR3

MRF8S21120HSR3

NXP USA Inc.

RF MOSFET Transistors HV8 2.1GHZ 120W NI780HS

SOT-23

MRF8S21120HSR3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case NI-780S
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated 65V
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 2.17GHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRF8S21120
JESD-30 Code R-CDFP-F2
Qualification Status Not Qualified
Operating Temperature (Max) 225°C
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 850mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 17.6dB
DS Breakdown Voltage-Min 65V
Power - Output 28W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $76.814640 $76.81464
10 $72.466642 $724.66642
100 $68.364756 $6836.4756
500 $64.495053 $32247.5265
1000 $60.844390 $60844.39

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