MRFE6S9160HSR3 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MRFE6S9160HSR3 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
NI-780S
Packaging
Tape & Reel (TR)
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Voltage - Rated
66V
HTS Code
8541.29.00.75
Frequency
880MHz
Base Part Number
MRFE6S9160
Current - Test
1.2A
Transistor Type
LDMOS
Gain
21dB
Power - Output
35W
Voltage - Test
28V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$75.540400
$75.5404
10
$71.264528
$712.64528
100
$67.230687
$6723.0687
500
$63.425176
$31712.588
1000
$59.835072
$59835.072
MRFE6S9160HSR3 Product Details
MRFE6S9160HSR3 Description
Designed for use in base station applications for N-CDMA, GSM, and GSM EDGE using frequencies between 865 and 960 MHz. suitable for applications requiring multicarrier amplifiers. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
MRFE6S9160HSR3 Features
? series equivalent large-signal impedance parameters
? Internally Matching for User-Friendliness
? Up to a Maximum of 32 VDD Operation Qualified
? Protection from Integrated ESD
? RoHS conformant
? on reel-to-reel tape. 250 Units per 56 mm, 13 inch Reel, R3 Suffix.