MRFE6VP5150NR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MRFE6VP5150NR1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
TO-270AB
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated
133V
HTS Code
8541.29.00.40
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
230MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRFE6VP5150
JESD-30 Code
R-PDFM-F4
Number of Elements
2
Configuration
COMMON SOURCE, 2 ELEMENTS
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
100mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS (Dual)
Gain
26.1dB
DS Breakdown Voltage-Min
133V
Power - Output
150W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
500
$27.58896
$13794.48
MRFE6VP5150NR1 Product Details
MRFE6VP5150NR1 Description
These highly durable devices are intended for use in high VSWR industrial applications, including as laser and plasma exciters, broadcast (analog and digital), aircraft, and radio/land mobile applications. They have mismatched input and output configurations that enable frequency ranges between 1.8 and 600 MHz to be utilized.
MRFE6VP5150NR1 Features
Broad Operating Frequency Spectrum
Extreme Ruggedness, Unmatched Input and Output Allowing the Use of a Wide Frequency Range, and Integrated Stability Enhancements
Low Thermodynamic Resistance
Circuitry for Integrated ESD Protection
In reel-to-reel tape. 500 Units, 44 mm Tape Width, 13-inch Reel; R1 Suffix.