MRFE6VP5600HR6 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MRFE6VP5600HR6 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
NI-1230-4H
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
4
ECCN Code
EAR99
Voltage - Rated
130V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
230MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRFE6VP5600
JESD-30 Code
R-CDFM-F4
Qualification Status
Not Qualified
Operating Temperature (Max)
225°C
Number of Elements
2
Configuration
COMMON SOURCE, 2 ELEMENTS
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
100mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS (Dual)
Gain
25dB
DS Breakdown Voltage-Min
130V
Power - Output
600W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
1670W
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
150
$110.60280
$16590.42
MRFE6VP5600HR6 Product Details
MRFE6VP5600HR6 Description
These highly durable devices are intended for use in high VSWR industrial applications, including as laser and plasma exciters, broadcast (analog and digital), aircraft, and radio/land mobile applications. They have mismatched input and output configurations that enable frequency ranges between 1.8 and 600 MHz to be utilized.
MRFE6VP5600HR6 Features
? Utilization of a Wide Frequency Range Due to Unmatched Input and Output
? The device can be utilized in a push-pull or single-ended configuration.
? Up to a Maximum of 50 VDD Operation Qualified
? 30 V to 50 V Characterized for Extended Power Range
? Appropriate Biasing and Suitable for Linear Application
? Improved Class C Operation with Integrated ESD Protection and a Wider Negative Gate-Source Voltage Range
? Displays series equivalent large-signal impedance parameters