MRFE6VP61K25HR6 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
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MRFE6VP61K25HR6 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
NI-1230
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
4
ECCN Code
EAR99
Voltage - Rated
133V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
230MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRFE6VP61K25
JESD-30 Code
R-CDFM-F4
Qualification Status
Not Qualified
Operating Temperature (Max)
225°C
Number of Elements
2
Configuration
COMMON SOURCE, 2 ELEMENTS
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
100mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS (Dual)
Gain
24dB
DS Breakdown Voltage-Min
125V
Power - Output
1250W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
1300W
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$301.04000
$301.04
500
$298.0296
$149014.8
1000
$295.0192
$295019.2
1500
$292.0088
$438013.2
2000
$288.9984
$577996.8
2500
$285.988
$714970
MRFE6VP61K25HR6 Product Details
MRFE6VP61K25HR6 Description
High VSWR industrial applications, such as laser and plasma exciters, broadcast (analog and digital), aircraft, and radio/land mobile applications, are where these incredibly robust devices are meant to be used. They can use frequency ranges between 1.8 and 600 MHz thanks to their mismatched input and output designs.
MRFE6VP61K25HR6 Features
Wide Frequency Range Due to Mismatched Input and Output Utilization: The device can be configured for single-ended or push-pull operation.
Designed from 30 V to 50 V for Extended Power Range Qualified Up to a Maximum of 50 VDD Operation
With the proper biasing, it is suitable for linear application
Improved Class C Operation via Integrated ESD Protection with a Wider Negative Gate-Source Voltage Range