MRFE6VP6300HR3 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MRFE6VP6300HR3 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
NI780-4
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
4
ECCN Code
EAR99
Voltage - Rated
130V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
230MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRFE6VP6300
JESD-30 Code
R-CDFM-F4
Qualification Status
Not Qualified
Operating Temperature (Max)
225°C
Number of Elements
2
Configuration
COMMON SOURCE, 2 ELEMENTS
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
100mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS (Dual)
Gain
26.5dB
DS Breakdown Voltage-Min
130V
Power - Output
300W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
MRFE6VP6300HR3 Product Details
MRFE6VP6300HR3 Description
These highly durable devices are intended for use in high VSWR industrial applications, including as laser and plasma exciters, broadcast (analog and digital), aircraft, and radio/land mobile applications. They have mismatched input and output configurations that enable frequency ranges between 1.8 and 600 MHz to be utilized.
MRFE6VP6300HR3 Features
? The device can be utilized in a push-pull or single-ended configuration.
? Up to a Maximum of 50 VDD Operation Qualified
? 30 V to 50 V Characterized for Extended Power Range
? Appropriate Biasing and Suitable for Linear Application