MRFE6VS25LR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
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MRFE6VS25LR5 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
NI-360
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2012
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
2
ECCN Code
EAR99
Voltage - Rated
133V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
512MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRFE6VS25
JESD-30 Code
R-PDFM-F2
Operating Temperature (Max)
150°C
Operating Temperature (Min)
-40°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Current - Test
10mA
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
25.9dB
DS Breakdown Voltage-Min
133V
Power - Output
25W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
50
$50.69100
$2534.55
100
$46.97370
$4697.37
MRFE6VS25LR5 Product Details
MRFE6VS25LR5 Description
MRFE6VS25LR5 is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MRFE6VS25LR5 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRFE6VS25LR5 has the common source configuration.
MRFE6VS25LR5 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures