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MRFE6VS25LR5

MRFE6VS25LR5

MRFE6VS25LR5

NXP USA Inc.

MRFE6VS25LR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MRFE6VS25LR5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case NI-360
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated 133V
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 512MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRFE6VS25
JESD-30 Code R-PDFM-F2
Operating Temperature (Max) 150°C
Operating Temperature (Min) -40°C
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Current - Test 10mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 25.9dB
DS Breakdown Voltage-Min 133V
Power - Output 25W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
50 $50.69100 $2534.55
100 $46.97370 $4697.37
MRFE6VS25LR5 Product Details

MRFE6VS25LR5 Description

 

MRFE6VS25LR5 is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MRFE6VS25LR5 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRFE6VS25LR5 has the common source configuration.

 

 

MRFE6VS25LR5 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging for lower junction temperatures

 

 

MRFE6VS25LR5 Applications

 

ISM applications

DC large signal applications


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