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PDTD113ES,126

PDTD113ES,126

PDTD113ES,126

NXP USA Inc.

TRANS PREBIAS NPN 500MW TO92-3

SOT-23

PDTD113ES,126 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Packaging Tape & Box (TB)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number PDTD113
Power - Max 500mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 500mA
Resistor - Base (R1) 1 k Ω
Resistor - Emitter Base (R2) 1 k Ω
RoHS Status ROHS3 Compliant

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