PH5330E,115

new-10%

Manufacturer part number:PH5330E,115

Manufacturer:NXP USA Inc.

Description:NXP PH5330E,115 MOSFET Transistor, N Channel, 15 A, 30 V, 5.7 mohm, 10 V, 1.7 V

Case Package:SOT-23

Datasheet:PH5330E,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	62.5W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.7m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2010pF @ 10V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	21nC @ 5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
JEDEC-95 Code	MO-235
Drain Current-Max (Abs) (ID)	80A
Drain-source On Resistance-Max	0.0085Ohm
Pulsed Drain Current-Max (IDM)	250A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	130 mJ
RoHS Status	ROHS3 Compliant