STI12NM50N

new-10%

Manufacturer part number:STI12NM50N

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 500V 11A I2PAK

Case Package:SOT-23

Datasheet:STI12NM50N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	MDmesh™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STI12N
Pin Count	3
Qualification Status	Not Qualified
Power Dissipation-Max	100W Tc
Element Configuration	Single
Power Dissipation	100W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	380m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	940pF @ 50V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	500V
RoHS Status	ROHS3 Compliant