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PHB193NQ06T,118

  • PHB193NQ06T,118
  • PHB193NQ06T,118

PHB193NQ06T,118

PHB193NQ06T,118

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4mOhm @ 25A, 10V ±20V 5082pF @ 25V 85.6nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

PHB193NQ06T,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchMOS™
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 300W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5082pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 85.6nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
PHB193NQ06T,118 Product Details

PHB193NQ06T,118 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5082pF @ 25V.Operating this transistor requires a 55V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

PHB193NQ06T,118 Features


a 55V drain to source voltage (Vdss)


PHB193NQ06T,118 Applications


There are a lot of NXP USA Inc.
PHB193NQ06T,118 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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