SIJ484DP-T1-GE3

new-10%

Manufacturer part number:SIJ484DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY SIJ484DP-T1-GE3 MOSFET Transistor, N Channel, 35 A, 30 V, 5200 ohm, 10 V, 1.2 V

Case Package:SOT-23

Datasheet:SIJ484DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Number of Elements	1
Power Dissipation-Max	5W Ta 27.7W Tc
Power Dissipation	5W
Turn On Delay Time	22 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.3m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 15V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	35A
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	20V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant