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PHK4NQ20T,518

PHK4NQ20T,518

PHK4NQ20T,518

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 130m Ω @ 4A, 10V ±20V 1230pF @ 25V 26nC @ 10V 200V 8-SOIC (0.154, 3.90mm Width)

SOT-23

PHK4NQ20T,518 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchMOS™
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 6.25W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1230pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
JEDEC-95 Code MS-012
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.13Ohm
DS Breakdown Voltage-Min 200V
RoHS Status ROHS3 Compliant
PHK4NQ20T,518 Product Details

PHK4NQ20T,518 Overview


The maximum input capacitance of this device is 1230pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 4A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 200V.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (5V 10V), this device helps reduce its power consumption.

PHK4NQ20T,518 Features


a 200V drain to source voltage (Vdss)


PHK4NQ20T,518 Applications


There are a lot of NXP USA Inc.
PHK4NQ20T,518 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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