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SI4646DY-T1-E3

SI4646DY-T1-E3

SI4646DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 12A 8SOIC

SOT-23

SI4646DY-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Weight 186.993455mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series SkyFET®, TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 3W Ta 6.25W Tc
Turn On Delay Time 23 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1790pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.79nF
Drain to Source Resistance 11.5mOhm
Rds On Max 11.5 mΩ
Height 1.55mm
Length 5mm
Width 4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

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