PHM25NQ10T,518 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 170 mJ.A device's maximal input capacitance is 1800pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 30.7A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 60A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

PHM25NQ10T,518 Features

the avalanche energy rating (Eas) is 170 mJ
based on its rated peak drain current 60A.
a 100V drain to source voltage (Vdss)

PHM25NQ10T,518 Applications

There are a lot of NXP USA Inc.
PHM25NQ10T,518 applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples