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PHP55N03LTA,127

PHP55N03LTA,127

PHP55N03LTA,127

NXP USA Inc.

MOSFET N-CH 25V 55A TO220AB

SOT-23

PHP55N03LTA,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1997
Series TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 85W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 55A
Drain-source On Resistance-Max 0.018Ohm
Pulsed Drain Current-Max (IDM) 220A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 60 mJ
RoHS Status ROHS3 Compliant

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