PMBFJ174,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website
SOT-23
PMBFJ174,215 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.21.00.95
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MBFJ174
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Operating Mode
DEPLETION MODE
Power - Max
300mW
FET Type
P-Channel
Transistor Application
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds
8pF @ 10V VGS
Drain-source On Resistance-Max
85Ohm
DS Breakdown Voltage-Min
30V
FET Technology
JUNCTION
Power Dissipation-Max (Abs)
0.3W
Current - Drain (Idss) @ Vds (Vgs=0)
20mA @ 15V
Voltage - Cutoff (VGS off) @ Id
5V @ 10nA
Voltage - Breakdown (V(BR)GSS)
30V
Resistance - RDS(On)
85Ohm
RoHS Status
ROHS3 Compliant
PMBFJ174,215 Product Details
PMBFJ174,215 Description
Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.
PMBFJ174,215 Features
? Extremely Efficient Trench with Field Stop Technology
? Low VCE(sat) Loss Reduces System Power Dissipation