2N5639_D75Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
2N5639_D75Z Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2003
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
2N5639
Power - Max
350mW
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
10pF @ 12V VGS
Current - Drain (Idss) @ Vds (Vgs=0)
25mA @ 20V
Voltage - Breakdown (V(BR)GSS)
30V
Resistance - RDS(On)
60Ohm
2N5639_D75Z Product Details
2N5639_D75Z Description
When using the MOSFET as a switch we can drive the MOSFET to turn “ON” faster or slower, or pass high or low currents. This ability to turn the power MOSFET “ON” and “OFF” allows the device to be used as a very efficient switch with switching speeds much faster than standard bipolar junction transistors.
2N5639_D75Z Applications
? This device is designed for low level analog switchng, sample and hold
circuits and chopper stabilized amplifiers.
? Sourced from process 51.
2N5639_D75Z Features
? 2.85 V Output Voltage for SCSI?2 Active Termination