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PMBFJ309,215

PMBFJ309,215

PMBFJ309,215

NXP USA Inc.

PMBFJ309,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website

SOT-23

PMBFJ309,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MBFJ309
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Power - Max 250mW
FET Type N-Channel
Transistor Application AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds 5pF @ 10V
JEDEC-95 Code TO-236AB
DS Breakdown Voltage-Min 25V
FET Technology JUNCTION
Power Dissipation-Max (Abs) 0.25W
Feedback Cap-Max (Crss) 2.5 pF
Highest Frequency Band VERY HIGH FREQUENCY B
Current - Drain (Idss) @ Vds (Vgs=0) 12mA @ 10V
Voltage - Cutoff (VGS off) @ Id 1V @ 1μA
Voltage - Breakdown (V(BR)GSS) 25V
Resistance - RDS(On) 50Ohm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.15466 $0.46398
6,000 $0.14652 $0.87912
15,000 $0.13838 $2.0757
30,000 $0.13431 $4.0293
PMBFJ309,215 Product Details

PMBFJ309,215 Description


The NXP PMBFJ309,215 is a Symmetrical N-channel silicon junction field-effect transistor in a SOT23 package.



PMBFJ309,215 Features


  • Low noise

  • Interchangeability of drain and source connections

  • High gain



PMBFJ309,215 Applications


  • AM input stage in car radios

  • VHF amplifiers

  • Oscillators and mixers

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