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PMD4001K,115

PMD4001K,115

PMD4001K,115

NXP USA Inc.

PMD4001K,115 datasheet pdf and Transistors - Special Purpose product details from NXP USA Inc. stock available on our website

SOT-23

PMD4001K,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN
Applications Gate Driver
Voltage - Rated 40V
Current Rating (Amps) 100mA
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN + Base-Emitter Diode
JEDEC-95 Code TO-236AB
Collector Current-Max (IC) 0.1A
DC Current Gain-Min (hFE) 24
Collector-Emitter Voltage-Max 40V
Turn Off Time-Max (toff) 398ns
Turn On Time-Max (ton) 17ns
RoHS Status ROHS3 Compliant
PMD4001K,115 Product Details

PMD4001K,115 Description

 

PMD4001K,115 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes PMD4001K,115 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. PMD4001K,115 has the common source configuration.

 

 

PMD4001K,115 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

PMD4001K,115 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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