PMD4001K,115 datasheet pdf and Transistors - Special Purpose product details from NXP USA Inc. stock available on our website
SOT-23
PMD4001K,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN
Applications
Gate Driver
Voltage - Rated
40V
Current Rating (Amps)
100mA
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN + Base-Emitter Diode
JEDEC-95 Code
TO-236AB
Collector Current-Max (IC)
0.1A
DC Current Gain-Min (hFE)
24
Collector-Emitter Voltage-Max
40V
Turn Off Time-Max (toff)
398ns
Turn On Time-Max (ton)
17ns
RoHS Status
ROHS3 Compliant
PMD4001K,115 Product Details
PMD4001K,115 Description
PMD4001K,115 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes PMD4001K,115 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. PMD4001K,115 has the common source configuration.