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PMEM4010ND,115

  • PMEM4010ND,115
  • PMEM4010ND,115

PMEM4010ND,115

PMEM4010ND,115

NXP USA Inc.

PMEM4010ND,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from NXP USA Inc. stock available on our website

SOT-23

PMEM4010ND,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PMEM4010N
Pin Count 6
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power - Max 600mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN + Diode (Isolated)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 210mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 1A
Transition Frequency 150MHz
Frequency - Transition 150MHz
Power Dissipation-Max (Abs) 0.6W
RoHS Status ROHS3 Compliant
PMEM4010ND,115 Product Details

PMEM4010ND,115 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 500mA 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).As a result, the part has a transition frequency of 150MHz.There is a 40V maximal voltage in the device due to collector-emitter breakdown.

PMEM4010ND,115 Features


the DC current gain for this device is 300 @ 500mA 5V
the vce saturation(Max) is 210mV @ 100mA, 1A
a transition frequency of 150MHz

PMEM4010ND,115 Applications


There are a lot of NXP USA Inc. PMEM4010ND,115 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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