PMN25UN,115

new-10%

Manufacturer part number:PMN25UN,115

Manufacturer:NXP USA Inc.

Description:MOSFET N-CH 20V 6A 6TSOP

Case Package:SOT-23

Datasheet:PMN25UN,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
Reference Standard	IEC-60134
JESD-30 Code	R-PDSO-G6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	530mW Ta 6.25W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	470pF @ 10V
Current - Continuous Drain (Id) @ 25°C	6A Ta
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.027Ohm
DS Breakdown Voltage-Min	20V
Source Url Status Check Date	2013-06-14 00:00:00
RoHS Status	ROHS3 Compliant