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SI4800,518

SI4800,518

SI4800,518

NXP USA Inc.

MOSFET N-CH 30V 9A SOT96-1

SOT-23

SI4800,518 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series TrenchMOS™
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish NICKEL PALLADIUM GOLD
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18.5m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 800mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 9A Ta
Gate Charge (Qg) (Max) @ Vgs 11.8nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.0185Ohm
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant

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