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1N916A

1N916A

1N916A

ON Semiconductor

DIODE GEN PURP 100V 200MA DO35

SOT-23

1N916A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial
Number of Pins 2
Supplier Device Package DO-35
Weight 80g
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Capacitance 2pF
Voltage - Rated DC 100V
Current Rating 200A
Base Part Number 1N916
Polarity Standard
Element Configuration Single
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 75V
Power Dissipation 500mW
Output Current 200mA
Voltage - Forward (Vf) (Max) @ If 1V @ 20mA
Forward Current 200mA
Operating Temperature - Junction -65°C~175°C
Max Surge Current 4A
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 200mA
Forward Voltage 1V
Max Reverse Voltage (DC) 100V
Average Rectified Current 200mA
Reverse Recovery Time 4 ns
Peak Reverse Current 5μA
Max Repetitive Reverse Voltage (Vrrm) 100V
Capacitance @ Vr, F 2pF @ 0V 1MHz
Peak Non-Repetitive Surge Current 4A
Reverse Voltage 100V
Max Forward Surge Current (Ifsm) 4A
Recovery Time 4 ns
Height 6.35mm
Length 6.35mm
Width 50.8mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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