2N2906

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Manufacturer part number:2N2906

Manufacturer:ON Semiconductor

Description:2N2906 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:2N2906 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-206AA, TO-18-3 Metal Can
Supplier Device Package	TO-18
Packaging	Bulk
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Base Part Number	2N2906
Power - Max	400mW
Transistor Type	PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic	1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	600mA
RoHS Status	Non-RoHS Compliant

Quantity	Unit Price	Ext. Price
2,000	$1.12266	$2.24532

2N2906 Description

2N2906 transistor was designed for use in high-speed switch circuits, DC-to-VHF amplifiers, and circuits for complementary. It is silicon-based PNP epitaxial plane transistors developed to handle small signals and general-purpose switching applications.

2N2906 Features

Collector-Emitter Volt (Vceo): 40V
Collector-Base Volt (Vcbo): 60V
Collector Current (Ic): 0.6A
hfe: 40-120 @ 150mA
Power Dissipation (Ptot): 400mW
Current-Gain-Bandwidth (ftotal): 200MHz

2N2906 Applications

High–speed switching circuits
DC to VHF amplifier applications
Complementary circuitry