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2N3703

2N3703

2N3703

ON Semiconductor

2N3703 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N3703 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal Form WIRE
Reach Compliance Code unknown
Base Part Number 2N3703
JESD-30 Code O-PBCY-W3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 100MHz
Frequency - Transition 100MHz
Collector-Base Capacitance-Max 12pF
2N3703 Product Details

2N3703 Overview


In this device, the DC current gain is 30 @ 50mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 5mA, 50mA.As you can see, the part has a transition frequency of 100MHz.The device has a 30V maximal voltage - Collector Emitter Breakdown.

2N3703 Features


the DC current gain for this device is 30 @ 50mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
a transition frequency of 100MHz

2N3703 Applications


There are a lot of ON Semiconductor 2N3703 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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