2N3703 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N3703 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Subcategory
Other Transistors
Terminal Position
BOTTOM
Terminal Form
WIRE
Reach Compliance Code
unknown
Base Part Number
2N3703
JESD-30 Code
O-PBCY-W3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
100MHz
Frequency - Transition
100MHz
Collector-Base Capacitance-Max
12pF
2N3703 Product Details
2N3703 Overview
In this device, the DC current gain is 30 @ 50mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 5mA, 50mA.As you can see, the part has a transition frequency of 100MHz.The device has a 30V maximal voltage - Collector Emitter Breakdown.
2N3703 Features
the DC current gain for this device is 30 @ 50mA 5V the vce saturation(Max) is 250mV @ 5mA, 50mA a transition frequency of 100MHz
2N3703 Applications
There are a lot of ON Semiconductor 2N3703 applications of single BJT transistors.