2N5401RLRAG Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In the part, the transition frequency is 100MHz.There is a breakdown input voltage of 150V volts that it can take.The maximum collector current is 600mA volts.
2N5401RLRAG Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz
2N5401RLRAG Applications
There are a lot of ON Semiconductor 2N5401RLRAG applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
