Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2N5401RLRAG

2N5401RLRAG

2N5401RLRAG

ON Semiconductor

2N5401RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N5401RLRAG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -150V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -600mA
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N5401
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 150V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status RoHS Compliant
Lead Free Lead Free
2N5401RLRAG Product Details

2N5401RLRAG Overview


This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In the part, the transition frequency is 100MHz.There is a breakdown input voltage of 150V volts that it can take.The maximum collector current is 600mA volts.

2N5401RLRAG Features


the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz

2N5401RLRAG Applications


There are a lot of ON Semiconductor 2N5401RLRAG applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

Related Part Number

KSC3503ESTU
KSC3503ESTU
$0 $/piece
ZTX1055A
ZTX1055A
$0 $/piece
KSD1021YBU
KSD1021YBU
$0 $/piece
MMBT4124-7-F
BC33825BU
BC33825BU
$0 $/piece
KSC2752OS
KSC2752OS
$0 $/piece
2SD1005-V-TP
MPSA92-AP

Get Subscriber

Enter Your Email Address, Get the Latest News