2N3906RLRA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 1mA, 10mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -200mA for this device.As a result, the part has a transition frequency of 250MHz.During maximum operation, collector current can be as low as 200mA volts.
2N3906RLRA Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906RLRA Applications
There are a lot of ON Semiconductor 2N3906RLRA applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
