BC516 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC516 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Weight
200.005886mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2015
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Voltage - Rated DC
-30V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
-1A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC516
Qualification Status
Not Qualified
Number of Elements
1
Polarity
PNP
Voltage
30V
Element Configuration
Single
Current
4A
Power Dissipation
625mW
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30000 @ 20mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
1V
Frequency - Transition
200MHz
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
10V
hFE Min
30000
Continuous Collector Current
1A
Height
5.33mm
Length
5.2mm
Width
4.19mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
BC516 Product Details
Description
The BC516 is a PNP Darlington Transistor designed for applications requiring extremely high current gain at currents to 1A. The Darlington configuration, also known as a Darlington pair in electronics, is a circuit made up of two bipolar transistors with one transistor's emitter connected to the other's base, causing the current to increase by the first transistor to be amplified even more by the second. Both transistors' collectors are interconnected. Comparing this setup to each transistor alone, the current gain is significantly higher. It functions like a transistor and is frequently packaged in that way.
Features
-55 to 150°C Operating junction temperature range
This device is designed for applications reguiring extremely high current gain at currents to 1A