2N4124TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N4124TF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
25V
Max Power Dissipation
625mW
Current Rating
200mA
Frequency
300MHz
Base Part Number
2N4124
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Gain Bandwidth Product
300MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
25V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
hFE Min
120
RoHS Status
RoHS Compliant
Lead Free
Lead Free
2N4124TF Product Details
2N4124TF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2mA 1V DC current gain.A VCE saturation (Max) of 300mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (200mA).Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
2N4124TF Features
the DC current gain for this device is 120 @ 2mA 1V the vce saturation(Max) is 300mV @ 5mA, 50mA the emitter base voltage is kept at 5V the current rating of this device is 200mA
2N4124TF Applications
There are a lot of ON Semiconductor 2N4124TF applications of single BJT transistors.