2N4126TFR Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 2mA 1V.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.This device has a current rating of -200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.When collector current reaches its maximum, it can reach 200mA volts.
2N4126TFR Features
the DC current gain for this device is 120 @ 2mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is -200mA
2N4126TFR Applications
There are a lot of ON Semiconductor 2N4126TFR applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
