2N4403RLG Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.The collector emitter saturation voltage is 750mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -600mA.The part has a transition frequency of 200MHz.The maximum collector current is 600mA volts.

2N4403RLG Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz

2N4403RLG Applications

There are a lot of ON Semiconductor 2N4403RLG applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface