2N4921 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 500mA 1V.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at 5V to achieve high efficiency.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The product comes in the supplier device package of TO-225AA.The device exhibits a collector-emitter breakdown at 40V.Collector current can be as low as 1A volts at its maximum.
2N4921 Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of TO-225AA
2N4921 Applications
There are a lot of ON Semiconductor 2N4921 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
