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2DB1424R-13

2DB1424R-13

2DB1424R-13

Diodes Incorporated

2DB1424R-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

2DB1424R-13 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Frequency 220MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2DB1424
Pin Count3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product220MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 2A
Collector Emitter Breakdown Voltage20V
Transition Frequency 220MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 6V
Height 1.5mm
Length 4.5mm
Width 2.5mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:4032 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.052877$0.052877
500$0.038880$19.44
1000$0.032400$32.4
2000$0.029725$59.45
5000$0.027780$138.9
10000$0.025842$258.42
15000$0.024992$374.88
50000$0.024575$1228.75

2DB1424R-13 Product Details

2DB1424R-13 Overview


DC current gain in this device equals 180 @ 100mA 2V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 220MHz.Breakdown input voltage is 20V volts.The maximum collector current is 3A volts.

2DB1424R-13 Features


the DC current gain for this device is 180 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 220MHz

2DB1424R-13 Applications


There are a lot of Diodes Incorporated 2DB1424R-13 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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