2N4921G Overview
In this device, the DC current gain is 30 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In the part, the transition frequency is 3MHz.When collector current reaches its maximum, it can reach 1A volts.
2N4921G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
2N4921G Applications
There are a lot of ON Semiconductor 2N4921G applications of single BJT transistors.
- Inverter
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- Driver
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- Interface
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- Muting
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