FZT957TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT957TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-300V
Max Power Dissipation
3W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
85MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT957
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
85MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
240mV @ 300mA, 1A
Collector Emitter Breakdown Voltage
300V
Transition Frequency
85MHz
Collector Emitter Saturation Voltage
-170mV
Max Breakdown Voltage
300V
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
6V
Continuous Collector Current
-1A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.155866
$0.155866
10
$0.147043
$1.47043
100
$0.138720
$13.872
500
$0.130868
$65.434
1000
$0.123460
$123.46
FZT957TA Product Details
FZT957TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 10V.The collector emitter saturation voltage is -170mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Maintaining the continuous collector voltage at -1A is essential for high efficiency.The emitter base voltage can be kept at 6V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).Single BJT transistor contains a transSingle BJT transistorion frequency of 85MHz.As a result, it can handle voltages as low as 300V volts.Collector current can be as low as 1A volts at its maximum.
FZT957TA Features
the DC current gain for this device is 100 @ 500mA 10V a collector emitter saturation voltage of -170mV the vce saturation(Max) is 240mV @ 300mA, 1A the emitter base voltage is kept at 6V the current rating of this device is -1A a transition frequency of 85MHz
FZT957TA Applications
There are a lot of Diodes Incorporated FZT957TA applications of single BJT transistors.