2N5089RLRA Overview

This device has a DC current gain of 400 @ 100μA 5V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 1mA, 10mA.Keeping the emitter base voltage at 3V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 50mA current rating.The part has a transition frequency of 50MHz.Maximum collector currents can be below 50mA volts.

2N5089RLRA Features

the DC current gain for this device is 400 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 50MHz

2N5089RLRA Applications

There are a lot of ON Semiconductor 2N5089RLRA applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting