SS9013HTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SS9013HTA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
SS9013
Power - Max
625mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
144 @ 50mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
500mA
SS9013HTA Product Details
SS9013HTA Overview
This device has a DC current gain of 144 @ 50mA 1V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 50mA, 500mA.Single BJT transistor comes in a supplier device package of TO-92-3.Detection of Collector Emitter Breakdown at 20V maximal voltage is present.
SS9013HTA Features
the DC current gain for this device is 144 @ 50mA 1V the vce saturation(Max) is 600mV @ 50mA, 500mA the supplier device package of TO-92-3
SS9013HTA Applications
There are a lot of ON Semiconductor SS9013HTA applications of single BJT transistors.