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SS9013HTA

SS9013HTA

SS9013HTA

ON Semiconductor

SS9013HTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SS9013HTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature150°C TJ
PackagingTape & Box (TB)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number SS9013
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 144 @ 50mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 500mA
In-Stock:1490 items

SS9013HTA Product Details

SS9013HTA Overview


This device has a DC current gain of 144 @ 50mA 1V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 50mA, 500mA.Single BJT transistor comes in a supplier device package of TO-92-3.Detection of Collector Emitter Breakdown at 20V maximal voltage is present.

SS9013HTA Features


the DC current gain for this device is 144 @ 50mA 1V
the vce saturation(Max) is 600mV @ 50mA, 500mA
the supplier device package of TO-92-3

SS9013HTA Applications


There are a lot of ON Semiconductor SS9013HTA applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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