2N5089TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N5089TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
25V
Max Power Dissipation
625mW
Current Rating
100mA
Frequency
50MHz
Base Part Number
2N5089
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Gain Bandwidth Product
50MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
400 @ 100μA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
25V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
4.5V
hFE Min
400
RoHS Status
RoHS Compliant
Lead Free
Lead Free
2N5089TA Product Details
2N5089TA Overview
In this device, the DC current gain is 400 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 1mA, 10mA.Keeping the emitter base voltage at 4.5V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.During maximum operation, collector current can be as low as 100mA volts.
2N5089TA Features
the DC current gain for this device is 400 @ 100μA 5V the vce saturation(Max) is 500mV @ 1mA, 10mA the emitter base voltage is kept at 4.5V the current rating of this device is 100mA
2N5089TA Applications
There are a lot of ON Semiconductor 2N5089TA applications of single BJT transistors.