BDT61-S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 1.5A 3V.A collector emitter saturation voltage of 2.5V allows maximum design flexibility.When VCE saturation is 2.5V @ 6mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The maximum collector current is 4A volts.
BDT61-S Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 1.5A
the emitter base voltage is kept at 5V
BDT61-S Applications
There are a lot of Bourns Inc. BDT61-S applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
