2N5191G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N5191G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
4A
Frequency
2MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N5191
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Gain Bandwidth Product
2MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1.5A 2V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1.4V @ 1A, 4A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
2MHz
Collector Emitter Saturation Voltage
1.4V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Height
6.35mm
Length
31.75mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.864840
$0.86484
10
$0.815887
$8.15887
100
$0.769705
$76.9705
500
$0.726136
$363.068
1000
$0.685034
$685.034
2N5191G Product Details
2N5191G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1.5A 2V DC current gain.The collector emitter saturation voltage is 1.4V, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.The part has a transition frequency of 2MHz.A maximum collector current of 4A volts can be achieved.
2N5191G Features
the DC current gain for this device is 25 @ 1.5A 2V a collector emitter saturation voltage of 1.4V the vce saturation(Max) is 1.4V @ 1A, 4A the emitter base voltage is kept at 5V the current rating of this device is 4A a transition frequency of 2MHz
2N5191G Applications
There are a lot of ON Semiconductor 2N5191G applications of single BJT transistors.