Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2N5191G

2N5191G

2N5191G

ON Semiconductor

2N5191G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N5191G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) 260
Current Rating 4A
Frequency 2MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N5191
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 2MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1.5A 2V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 1.4V @ 1A, 4A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage 1.4V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Height 6.35mm
Length 31.75mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.864840 $0.86484
10 $0.815887 $8.15887
100 $0.769705 $76.9705
500 $0.726136 $363.068
1000 $0.685034 $685.034
2N5191G Product Details

2N5191G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1.5A 2V DC current gain.The collector emitter saturation voltage is 1.4V, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.The part has a transition frequency of 2MHz.A maximum collector current of 4A volts can be achieved.

2N5191G Features


the DC current gain for this device is 25 @ 1.5A 2V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 2MHz

2N5191G Applications


There are a lot of ON Semiconductor 2N5191G applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News