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BC817K-40VL

BC817K-40VL

BC817K-40VL

Nexperia USA Inc.

BC817K-40VL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BC817K-40VL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 100MHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.222000 $0.222
10 $0.209434 $2.09434
100 $0.197579 $19.7579
500 $0.186395 $93.1975
1000 $0.175845 $175.845
BC817K-40VL Product Details

BC817K-40VL Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100mA 1V.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Detection of Collector Emitter Breakdown at 45V maximal voltage is present.

BC817K-40VL Features


the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA

BC817K-40VL Applications


There are a lot of Nexperia USA Inc. BC817K-40VL applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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