2N5306

new-10%

Manufacturer part number:2N5306

Manufacturer:ON Semiconductor

Description:2N5306 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:2N5306 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Number of Pins	3
Supplier Device Package	TO-92-3
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2002
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	25V
Max Power Dissipation	625mW
Current Rating	1.2A
Base Part Number	2N5306
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power - Max	625mW
Transistor Type	NPN - Darlington
Collector Emitter Voltage (VCEO)	25V
Max Collector Current	1.2A
DC Current Gain (hFE) (Min) @ Ic, Vce	7000 @ 2mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	1.4V @ 200μA, 200mA
Collector Emitter Breakdown Voltage	25V
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	1.2A
Collector Emitter Saturation Voltage	1.4V
Collector Base Voltage (VCBO)	25V
Emitter Base Voltage (VEBO)	12V
hFE Min	20000
Height	5.33mm
Length	5.2mm
Width	4.19mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free