2N5401RLRA Overview

In this device, the DC current gain is 60 @ 10mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -600mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.As a result, it can handle voltages as low as 150V volts.Collector current can be as low as 600mA volts at its maximum.

2N5401RLRA Features

the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz

2N5401RLRA Applications

There are a lot of ON Semiconductor 2N5401RLRA applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting