2N5460G datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
2N5460G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 8 hours ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~135°C TJ
Packaging
Bulk
Published
2001
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8541.21.00.95
Voltage - Rated DC
-40V
Max Power Dissipation
350mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
10mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
2N5460
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Operating Mode
DEPLETION MODE
Power Dissipation
200mW
Power - Max
350mW
FET Type
P-Channel
Transistor Application
AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds
7pF @ 15V
Gate to Source Voltage (Vgs)
40V
FET Technology
JUNCTION
Feedback Cap-Max (Crss)
2 pF
Current - Drain (Idss) @ Vds (Vgs=0)
1mA @ 15V
Voltage - Cutoff (VGS off) @ Id
750mV @ 1μA
RoHS Status
RoHS Compliant
Lead Free
Lead Free
2N5460G Product Details
2N5460G Description
2N5460G transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes 2N5460G MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor 2N5460G has the common source configuration.