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2N5460G

2N5460G

2N5460G

ON Semiconductor

2N5460G datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

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2N5460G Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status OBSOLETE (Last Updated: 8 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~135°C TJ
Packaging Bulk
Published 2001
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.95
Voltage - Rated DC -40V
Max Power Dissipation 350mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 10mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N5460
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 200mW
Power - Max 350mW
FET Type P-Channel
Transistor Application AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds 7pF @ 15V
Gate to Source Voltage (Vgs) 40V
FET Technology JUNCTION
Feedback Cap-Max (Crss) 2 pF
Current - Drain (Idss) @ Vds (Vgs=0) 1mA @ 15V
Voltage - Cutoff (VGS off) @ Id 750mV @ 1μA
RoHS Status RoHS Compliant
Lead Free Lead Free
2N5460G Product Details

2N5460G Description

 

2N5460G transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes 2N5460G MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor 2N5460G has the common source configuration.

 

 

2N5460G Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

2N5460G Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display

 

 

 


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