2N5461_L99Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
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2N5461_L99Z Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature
-65°C~135°C TJ
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
350mW
FET Type
P-Channel
Input Capacitance (Ciss) (Max) @ Vds
7pF @ 15V
Current - Drain (Idss) @ Vds (Vgs=0)
9mA @ 15V
Voltage - Cutoff (VGS off) @ Id
1V @ 1μA
Voltage - Breakdown (V(BR)GSS)
40V
2N5461_L99Z Product Details
2N5461_L99Z Description
A JFET is a three terminal semiconductor device in which current conduction is by one type of carrier i.e. electrons or holes. The current conduction is controlled by means of an electric field between the gate and the conducting channel of the device. The JFET has high input impedance and low noise level.
2N5461_L99Z Applications
? Power Factor Correction (PFC) circuits
? Full bridge topologies
? Half bridge topologies
? Push-Pull circuits
? Uninterruptible power supplies
? Zero voltage and zero current switching circuits
2N5461_L99Z Features
? 100kHz Operation at 390V, 14A
? 200kHZ Operation at 390V, 9A
? 600V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC