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KSK30YTA

KSK30YTA

KSK30YTA

ON Semiconductor

KSK30YTA datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

KSK30YTA Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature 125°C TJ
Packaging Tape & Box (TB)
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSK30
Power - Max 100mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 8.2pF @ 0V
Current - Drain (Idss) @ Vds (Vgs=0) 1.2mA @ 10V
Voltage - Cutoff (VGS off) @ Id 400mV @ 100nA
Voltage - Breakdown (V(BR)GSS) 50V
KSK30YTA Product Details

KSK30YTA Description


KSK30YTA is a type of N-channel junction FET provided by ON Semiconductor. It is a field effect device that changes the width of the gate space charge region by applying an external gate voltage, thereby controlling the conductivity of the channel. The conductive channel between the source and drain is a rather low-conductivity material. The KSK30YTA junction FET is widely used in small signal amplifiers, current limiters, voltage-controlled resistors, switching circuits, and integrated circuits.



KSK30YTA Features


High input impedance

Low noise

High voltage

Package: TO-92



KSK30YTA Applications


Small signal amplifiers

Current limiters


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